发明名称 VARIABLE LEVEL MEMORY
摘要 There exists a tradeoff between the fidelity of data storage and the number of bits stored in a memory cell. The number of bits may be increased per cell when fidelity is less important. The number of bits per cell may be decreased when fidelity is more important. A memory, in some embodiments, may change between storage modes on a cell by cell basis.
申请公布号 KR20040044938(A) 申请公布日期 2004.05.31
申请号 KR20047003885 申请日期 2002.08.06
申请人 发明人
分类号 G11C16/34;G11C11/56 主分类号 G11C16/34
代理机构 代理人
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