METHOD FOR FORMING FLOATING GATE STRUCTURE OF NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for forming a floating gate structure of a non-volatile memory device is provided to form a thin mask layer by removing a nitride layer pattern without damage of a source line. CONSTITUTION: A gate oxide layer and a floating gate conductive layer are formed on a substrate(10). A nitride layer pattern is formed on the floating gate conductive layer. A spacer is formed on a sidewall of the nitride layer pattern. The substrate is exposed by etching the floating gate conductive layer and the gate oxide layer. A source region(22) is formed by implanting ions into the surface of the exposed substrate. A source line(34) is formed by filling a conductive layer between the spacers. The thickness of the nitride layer pattern is reduced by removing partially the nitride layer pattern. A mask layer is formed on the source line by oxidizing selectively the surface of the source line. The nitride layer pattern and the floating gate conductive layer are removed by using the mask layer as an etch mask.