PIN type diode with polycrystalline heterostructures incorporating three different semiconductor materials for the fabrication of dephasing panels for radar and telecommunication antennae

摘要

A PIN type diode with semiconductor based heterostructures incorporates at least one first material in contact with a second material itself in contact with a third material. The first material is polycrystalline of type Si1-z-uGezCu doped n or p, the second material is polycrystalline of type Sil-x-yGexCy and the third material is polycrystalline of type Si1-t-vGetCv doped respectively p or n, with x, y, z, t, u and v as molar fractions. The first material is different from the second material and/or the second material is different from the third material in a manner to create at least one heterostructure.