| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to lengthen the lifetime of devices by trapping impurities using a gettering layer. CONSTITUTION: A gettering layer(20) is formed by implanting impurities into a semiconductor substrate(10). By annealing the gettering layer for 0.5-15 hours, the impurities in the substrate are trapped to the gettering layer. The gettering layer and the trapped impurities are removed by removing a desired thickness of the surface of the substrate.
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