发明名称 |
SUBSTRATE PROCESSING DEVICE |
摘要 |
<p>A substrate processing device comprises a reaction vessel (11) forming a space receiving a substrate (1) and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port (16) formed in the reaction vessel (11) for exhausting the reaction vessel (11), and a gas supply system (70A, 70B) for supplying at least a plurality of reaction gases into the reaction vessel (11), the gas supply system (70A, 70B) including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate (1) to thereby remove adherents in the reaction vessel (11), and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel (11) after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.</p> |
申请公布号 |
WO2004044970(A1) |
申请公布日期 |
2004.05.27 |
申请号 |
WO2003JP14162 |
申请日期 |
2003.11.06 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC.;SAKAI, MASANORI;SHIMA, NOBUHITO;OKUDA, KAZUYUKI |
发明人 |
SAKAI, MASANORI;SHIMA, NOBUHITO;OKUDA, KAZUYUKI |
分类号 |
C23C16/44;(IPC1-7):H01L21/205;H01L21/31 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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