| 摘要 |
FIELD: semiconductor power electronics; unipolar transistors whose filed effect is afforded by insulated gate. SUBSTANCE: organized in drain diffused zone of planar power MOS transistor is Schottky barrier zone whose area is much smaller by at least ten times than drain diffused zone so that relatively high output capacitance of drain is suppressed by low capacitance of Schottky barrier. EFFECT: reduced output capacitance of transistor. 1 cl, 4 dwg |
