发明名称 POLYMER COMPOUND, POSITIVE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING THE RESIST MATERIAL
摘要 <P>PROBLEM TO BE SOLVED: To obtain a positive resist material, especially a chemically amplified positive resist material, having a high sensitivity, a high resolution, an exposure latitude, process adaptability which are superior to those of a conventional positive resist material, gives good-shaped pattern after exposure, and is small in, especially, line edge roughness, and is excellent in etching resistance. <P>SOLUTION: The polymer compound consists essentially of copolymerized repeating units represented by formula (1) or formula (2) and has a weight-average molecular weight in the range of 1,000 to 500,000. The positive resist material contains the polymer compound as a base resin. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004149754(A) 申请公布日期 2004.05.27
申请号 JP20030020843 申请日期 2003.01.29
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;KANOU TAKESHI;HASEGAWA KOJI;WATANABE TAKESHI;WATANABE OSAMU;TAKEDA TAKANOBU
分类号 G03F7/039;C08F222/06;C08F222/40;C08F224/00;C08F232/08;C08F234/04;H01L21/027 主分类号 G03F7/039
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