发明名称 EUV EXPOSURE METHOD AND ALIGNER
摘要 PROBLEM TO BE SOLVED: To prevent the lowering of the throughput of an aligner while preventing exposing work from being hindered by fine dust adhering to a reticle (mask) used for EUV lithography after the reticle (mask) is introduced into the aligner. SOLUTION: The reticle 2 is carried in an evacuated vacuum chamber 17 through a reticle load-lock chamber 19 provided in a temperature adjusting chamber 16. The main body 18 of an EUV aligner is installed in the vacuum chamber 17 and performs EUV exposure. The reticle 2 is cleaned by means of a reticle cleaning mechanism 22 in the vacuum chamber 17. At the time of cleaning the reticle 2, the reticle 2 is not inspected for adhering dust. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004152843(A) 申请公布日期 2004.05.27
申请号 JP20020313961 申请日期 2002.10.29
申请人 NIKON CORP 发明人 OTA KAZUYA
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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