| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a square edge in a trench is rounded off and an element isolation area with electrically high reliability can be formed. SOLUTION: An SiGe layer 2 with reduced lattice strain, an SiGe layer 3 and an Si layer 4 with lattice strain are formed in sequence on an Si substrate 1. In such a semiconductor substrate S, a trench T is formed in a part for an element isolation area by etching. Then, an Si film is stacked on an entire exposed surface, and the stacked Si film is dry-oxidized to form an SiO<SB>2</SB>film 8 and round off an edge part E in the trench T as a result. COPYRIGHT: (C)2004,JPO
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