Magnetic memory configuration

摘要

A magnetic memory configuration stores data and avoids ageing effects. The memory configuration contains a cell array containing magnetic memory cells disposed along a first direction and a second direction crossing the former, a multiplicity of electrical lines along the first direction, and a multiplicity of electrical lines along the second direction. The magnetic memory cells in each case are disposed at crossover points of the electrical lines. A first current supply device supplies respectively selected electrical lines along the first direction with current. A second current supply device supplies respectively selected electrical lines along the second direction with current. The second current supply device is configured for setting the direction of the current in accordance with an information item to be written. The first current supply device is suitable for changing over the direction of the current as desired.