发明名称 |
SPUTTERING TARGET AND POWDER FOR PRODUCTION THEREOF |
摘要 |
<p>An Sb-Te base sputtering target of 20 mum or less average crystal grain diameter, 60 MPa or greater deflective strength and 1000 ppm or less oxygen content. In particular, an Sb-Te base sputtering target that at the time of sputtering, enables effectively inhibiting particle occurrence, abnormal electrical discharge, nodule occurrence, target cracking or breakage, etc. and enables reducing the amount of oxygen contained in the target; a process for producing the same; and powder for sintering which is suitable for production of the sputtering target.</p> |
申请公布号 |
WO2004044260(A1) |
申请公布日期 |
2004.05.27 |
申请号 |
WO2003JP09857 |
申请日期 |
2003.08.04 |
申请人 |
NIKKO MATERIALS CO., LTD.;TAKAHASHI, HIDEYUKI;YAHAGI, MASATAKA;NAKAMURA, ATSUSHI |
发明人 |
TAKAHASHI, HIDEYUKI;YAHAGI, MASATAKA;NAKAMURA, ATSUSHI |
分类号 |
B22F1/00;C22C1/04;C22C12/00;C23C14/34;(IPC1-7):C23C14/34 |
主分类号 |
B22F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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