发明名称 SPUTTERING TARGET AND POWDER FOR PRODUCTION THEREOF
摘要 <p>An Sb-Te base sputtering target of 20 mum or less average crystal grain diameter, 60 MPa or greater deflective strength and 1000 ppm or less oxygen content. In particular, an Sb-Te base sputtering target that at the time of sputtering, enables effectively inhibiting particle occurrence, abnormal electrical discharge, nodule occurrence, target cracking or breakage, etc. and enables reducing the amount of oxygen contained in the target; a process for producing the same; and powder for sintering which is suitable for production of the sputtering target.</p>
申请公布号 WO2004044260(A1) 申请公布日期 2004.05.27
申请号 WO2003JP09857 申请日期 2003.08.04
申请人 NIKKO MATERIALS CO., LTD.;TAKAHASHI, HIDEYUKI;YAHAGI, MASATAKA;NAKAMURA, ATSUSHI 发明人 TAKAHASHI, HIDEYUKI;YAHAGI, MASATAKA;NAKAMURA, ATSUSHI
分类号 B22F1/00;C22C1/04;C22C12/00;C23C14/34;(IPC1-7):C23C14/34 主分类号 B22F1/00
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