| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the sublimation of semiconductor-constituting atoms from the rear surface side of a semiconductor substrate can be prevented at the time of performing heat treatment, and to provide a method of managing a semiconductor manufacturing process. <P>SOLUTION: The method of manufacturing semiconductor device including a step for forming a gate insulating film on the semiconductor substrate 10, has a step for forming an insulating film 12 so as to cover the front and rear surface sides of the substrate 10, a step for etching off the insulating film 12 from the front surface side of the substrate 10, and a step for heat-treating the substrate 10 in a state where the insulating film 12 exists on the rear surface side of the substrate 10, are performed before the step for forming the gate insulating film. <P>COPYRIGHT: (C)2004,JPO |
