| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a III-V group compound semiconductor that emits light through band edge emission and has a high luminous efficiency, and to provide its manufacturing method. <P>SOLUTION: This semiconductor includes a structure in which, on a sapphire substrate, a first III-V group compound semiconductor, with a different band gap, shown at least by the general formula Ga<SB>a</SB>Al<SB>b</SB>N (where a+b=1, O≤a, and b≤1) and a second III-V compound semiconductor shown by the general formula In<SB>c</SB>Ga<SB>d</SB>N (where c+d=1, O<c≤1, O≤d<1) have the structure of being adjacent to each other in this sequence, and in this semiconductor, the thickness of the second III-V compound semiconductor is equal to or larger than 10Å and equal to or smaller than 90Å, the richness of any element of Si, Ge, and a 2 group element is less than 1x10<SP>17</SP>cm<SP>-3</SP>, the angle made by the surface of the sapphire substrate and the C surface is assumed to be less than 5 degrees. <P>COPYRIGHT: (C)2004,JPO |
