| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent deterioration of share intensity of a bump electrode due to side etching of a common electrode film which remarkably degrades quality of a semiconductor device, since etching speed in a lateral direction becomes several ten times as much as etching speed in a film thickness direction when over-etching titanium-tungsten alloy layer of the common electrode film by local battery effect of gold-titanium-tungsten, large side etching advances and share intensity drops, and to provide reliability of the semiconductor device. <P>SOLUTION: The semiconductor device is provided with an electrode pad formed on a semiconductor substrate, an insulating film which covers the semiconductor substrate and has an opening in an electrode pad and the bump electrode, especially the bump electrode in a straight wall shape. A plurality of sides of a plane shape of the bump electrode are larger than a size of the electrode pad. <P>COPYRIGHT: (C)2004,JPO</p> |
