| 摘要 |
PROBLEM TO BE SOLVED: To detect a desired etching depth as an endpoint of etching operation. SOLUTION: An etching apparatus comprises a chamber 1 sustained in vacuum state, a means for introducing gas into the chamber 1, and a power supply 2 generating high frequency power, and the etching method finishes etching operation after detecting an etching endpoint mathematically when an article 13 mounted on a lower electrode 12 is etched. Slope of a high frequency current flowing into the lower electrode 12 is correlated previously with an etching rate, slope of current values being detected during etching operation is calculated sequentially, etching depth of the article 13 to be etched is operated sequentially based on the calculated slope of current value and the etching time, and etching is finished when a decision is made that the calculated etching depth has reached a predetermined level. COPYRIGHT: (C)2004,JPO
|
