| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor device superior in an electric characteristic. SOLUTION: The organic semiconductor device is formed of at least two p-type and n-type channel organic semiconductor elements. Each element is provided with a pair of confronted source electrode and drain electrode, a carrier mobile organic semiconductor layer formed so that a channel can be formed between the source electrode and the drain electrode, and a gate electrode applying an electric field in the organic semiconductor layer between the source electrode and the drain electrode through a gate insulating film. The source electrode and the drain electrode of the p-type channel organic semiconductor element are constituted of materials having a work function whose value is higher than that of the source electrode and the drain electrode of the n-type channel organic semiconductor element. COPYRIGHT: (C)2004,JPO
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