| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching device which inexpensively and comparatively easily performs skew etching in and at a desired direction and an angle, and to provide an etching method using the device. SOLUTION: The dry etching device 100 is provided with a chamber 10, a working substrate control unit 20, a plasma generating means 40 having a high frequency oscillator 41, a matching unit 42 and a blocking capacitor 43, a plasma generating means 50 having a high frequency oscillator 51, a matching unit 52 and a plasma generating coil (anode electrode) 53, a gas supply port 11, an exhaust port 12, and an evacuation mechanism 60. The device is also provided with an etched substrate control unit which can incline and rotate an etched substrate during plasma processing. COPYRIGHT: (C)2004,JPO
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