GMR magnetoresistive layer method of manufacture for use in manufacture of GMR storage components or a GMR sensor elements, according to the spin-valve principle, whereby two magnetization steps are applied

摘要

Method for manufacturing GMR magnetoresistive layer arrangement (5) that has a reference layer, an intermediate layer and a detection layer. In a first manufacturing step a first magnetic field (B1) is applied to the reference layer in a first direction, while in a second step a second magnetic field (B2) is applied with a resultant magnetization (m2). The directions of the first and second magnetic fields are different. An Independent claim is made for a method of manufacture of a GMR sensor element.