| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the structure of a photoelectric conversion device in which damage to a semiconductor layer is lessened in a manufacturing method and limits on an electrode material and a method for manufacturing an electrode structure are small, and to provide its manufacturing method. <P>SOLUTION: In the photoelectric conversion device, two electrodes laid in layers through an insulating film are manufactured previously, and a semiconductor layer is formed after the electrodes are manufactured and shaped. The electrode structure comprises a first electrode, an insulating film laid in layer on a first electrode, a second electrode laid in layer on the insulating film and not touching the first electrode directly, and a semiconductor layer touching both the first and second electrodes. <P>COPYRIGHT: (C)2004,JPO</p> |
