| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems wherein the insulating film of an electrostatic chuck is dielectrically broken, and residual attraction occurs in the removal of a wafer. SOLUTION: In the electrostatic chuck 1, an electrode 4 for attraction is provided on one surface of a ceramic substrate 3, the insulating film is provided on the electrode 4 for attraction, and the upper surface is set to be an attraction surface 2a for placing the wafer. The insulating film consists of uniform amorphous ceramic made of an oxide or a nitride and the thickness of the insulating film is set to 10-100μm. COPYRIGHT: (C)2004,JPO |
