发明名称 METHOD FOR DEPOSITING METAL THIN FILM, AND SUBSTRATE WITH ELECTRODE
摘要 PROBLEM TO BE SOLVED: To provide a method for depositing a metal thin film on a substrate with high precision in which the process is short, and the damage of a base material is reduced, and to provide a substrate with an electrode in which a second metal thin film is deposited thereon with high precision. SOLUTION: The method for depositing a first metal thin film and a second thin film on a substrate comprises a process where a resist layer is formed on the substrate; after exposure via a mask of a first metal thin film pattern and development, the first metal thin film is deposited; without removing the resist layer, a second metal is vapor-deposited via a metal mask having an opening part corresponding to the first metal thin film region to deposit the second metal thin film 2; next, the metal mask is detached; and the resist layer is removed. In this case, the second metal thin film region is not present at the outside of the first metal thin film region. Further, in the substrate with an electrode, the surface of the substrate is provided with the first metal thin film and the second metal thin film in this order; the second metal thin film region is not present at the outside of the first metal thin film region; and the first metal thin film is the electrode. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004149849(A) 申请公布日期 2004.05.27
申请号 JP20020316005 申请日期 2002.10.30
申请人 HITACHI CHEM CO LTD 发明人 YAMAGUCHI MASATOSHI;KIKUCHI HIROAKI;MATSUURA HIROYUKI
分类号 C23C14/04;C23C28/00;H01L21/28;(IPC1-7):C23C14/04 主分类号 C23C14/04
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