发明名称 Semiconductor electro-absorption optical modulator integrated light emission element, light emission element module and optical transmission system
摘要 For achieving a transmission light source having different transmission properties or characteristics, i.e., the alpha parameters, depending upon application thereof, in a light emission element of semiconductor EA modulator integrated type being constructed with a light emission portion for lasing with a single vertical mode and a plurality of EA modulators, wherein an absorption edge wavelength under the condition of applying no bias thereto, in the semiconductor multiple-quantum-well structure owned by the modulator which is near to an emission side of the light emission portion, is to be equal or longer than the absorption edge wavelength owned by the modulator positioned far from the emission side of the light emission portion.
申请公布号 US2004101316(A1) 申请公布日期 2004.05.27
申请号 US20030701505 申请日期 2003.11.05
申请人 HITACHI, LTD.;OPNEXT JAPAN 发明人 NAOE KAZUHIKO;UOMI KAZUHISA;AOKI MASAHIRO;FUJITA MINORU
分类号 H04B10/04;H04B10/06;(IPC1-7):H04B10/04 主分类号 H04B10/04
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