| 摘要 |
First and second trenches are formed on an n<+> type substrate at a power MOSFET formation region and a peripheral device formation region, respectively. An n<-> type epitaxial film, a p type epitaxial film, and an n<+> type epitaxial film are deposited on the substrate and in the trenches, and then flattening is performed. As a result, an n<-> type region is provided in the second trench of the peripheral device formation region. Then, a p type well layer is formed in the n<-> type region by ion-implantation. Accordingly, a power MOSFET and a peripheral device can been formed at the power MOSFET formation region and the peripheral device formation region easily.
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