| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting element with high reliability and luminous efficiency by reducing defects of an epitaxial layer. <P>SOLUTION: In an oxide semiconductor light emitting element which is formed by laminating at least an n-type clad layer constituted of a ZnO semiconductor, an active layer, a p-type clad layer and a p-type contact layer one by one on a substrate, an In-doped n-type ZnO semiconductor layer is formed between the substrate and the n-type clad layer. <P>COPYRIGHT: (C)2004,JPO |
