| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Zn-based semiconductor light emitting element which can be easily manufactured and whose quality in light emitting region can be enhanced, and to provide its manufacturing method. <P>SOLUTION: On the main surface of a substrate 1, a pre-stage buffer layer 2', composed of an In-based compound or a Zn-based compound which are not contained in the substrate 1, is laminated as a polycrystal layer or an amorphous layer. Before a light emitting region is formed, the pre-stage buffer layer 2' is subjected to heat treatment for recrystallization, for forming a buffer layer 2. <P>COPYRIGHT: (C)2004,JPO |
