| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a work function of a gate electrode is optimized, and the deterioration in characteristics or a decrease in reliability is prevented. <P>SOLUTION: The method of manufacturing a semiconductor device which comprises an n-type MIS transistor and a p-type MIS transistor, comprises processes of: forming a first gate insulation film 110 in a first region wherein the n-type MIS transistor is to be formed; depositing a first conductive film 111 which contains silicon, a metal element selected among tungsten and molybdenum, and a dopant element selected among phosphorus and arsenic, on the first gate insulation film in the first region; forming a second gate insulation film 110 in a second region wherein the p-type MIS transistor is to be formed; and forming a second conductive film 113 having a work function higher than that of the first conductive film, on the second gate insulation film in the second region. <P>COPYRIGHT: (C)2004,JPO |
