发明名称 SUBSTRATE TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a treatment method in which the number of releases of a load-locked chamber is decreased even when a dummy wafer is used. SOLUTION: In this treatment method, the dummy wafer is housed in wafer cassettes 30a and 30b set in the load-locked chambers 16a and 16b together with a plurality of semiconductor wafers to be treated, to continuously perform treatment for the dummy wafer with treatment for the semiconductor wafer. Consequently, the change of the semiconductor wafer to be treated with the dummy wafer is not needed, and the number of releases of the load-locked chamber is decreased. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004153185(A) 申请公布日期 2004.05.27
申请号 JP20020319064 申请日期 2002.10.31
申请人 APPLIED MATERIALS INC 发明人 MACHIDA TERUHISA;HOSHINO KATSUHIKO
分类号 H01L21/3065;H01L21/02;H01L21/677;H01L21/68;(IPC1-7):H01L21/68;H01L21/306 主分类号 H01L21/3065
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