| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming the interconnection of substrate penetration for a microelectronic device including a substrate (30) having a surface and back side. SOLUTION: The method (10) is to form the interconnection of the substrate penetration for the microelectronic device including the substrate (30) having the surface and back side. This method includes a step for forming a circuit element (34) on the surface side of the substrate (30), a step for forming a trench (38) reaching the circuit element (34) on the back side of the substrate (30), a step for forming one layer (40) of a polymer insulating material in the trench (38), a step for removing a polymer material sufficient to expose at least a part of the circuit element (34), from the one layer (40) of the polymer insulating material, and a step for forming a conductive interconnection layer (42) electrically conducting to the circuit element (34) in the trench (38). COPYRIGHT: (C)2004,JPO |
