发明名称 Light emitting heterostructure
摘要 An improved light emitting heterostructure. In particular, a nitride-based light emitting heterostructure is provided that includes a light generating structure and a distributed semiconductor heterostructure Bragg reflector structure formed above the light generating structure. In operation, the light generating structure generates light, a portion of which is reflected by the distributed semiconductor heterostructure Bragg reflector structure, thereby increasing the total amount of light that can be emitted from the heterostructure.
申请公布号 US2004099869(A1) 申请公布日期 2004.05.27
申请号 US20030690760 申请日期 2003.10.22
申请人 GASKA REMIGIJUS;SHUR MICHAEL S. 发明人 GASKA REMIGIJUS;SHUR MICHAEL S.
分类号 H01L33/10;H01L33/38;H01S5/10;H01S5/125;H01S5/187;H01S5/323;(IPC1-7):H01L27/15 主分类号 H01L33/10
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