发明名称 |
Light emitting heterostructure |
摘要 |
An improved light emitting heterostructure. In particular, a nitride-based light emitting heterostructure is provided that includes a light generating structure and a distributed semiconductor heterostructure Bragg reflector structure formed above the light generating structure. In operation, the light generating structure generates light, a portion of which is reflected by the distributed semiconductor heterostructure Bragg reflector structure, thereby increasing the total amount of light that can be emitted from the heterostructure.
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申请公布号 |
US2004099869(A1) |
申请公布日期 |
2004.05.27 |
申请号 |
US20030690760 |
申请日期 |
2003.10.22 |
申请人 |
GASKA REMIGIJUS;SHUR MICHAEL S. |
发明人 |
GASKA REMIGIJUS;SHUR MICHAEL S. |
分类号 |
H01L33/10;H01L33/38;H01S5/10;H01S5/125;H01S5/187;H01S5/323;(IPC1-7):H01L27/15 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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