Isolierung durch aktive Transistoren mit geerdeten Torelektroden,申请号DE19956031282T-传众专利搜索

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发明名称	Isolierung durch aktive Transistoren mit geerdeten Torelektroden
摘要
申请公布号	DE69531282(T2)	申请公布日期	2004.05.27
申请号	DE19956031282T	申请日期	1995.11.28
申请人	STMICROELECTRONICS, INC.	发明人	CHAN, TSIU CHIU
分类号	H01L21/76;H01L21/336;H01L21/761;H01L21/765;H01L27/08;H01L27/118;H01L29/78;(IPC1-7):H01L21/765	主分类号	H01L21/76
代理机构		代理人
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