| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a member for a plasma processing device, which has high resistance to the plasma, can transmit microwave effectively by restraining the calorific value by reducing the loss and is made of aluminum nitride ceramics whose purity is high and contamination to a wafer is extremely small. <P>SOLUTION: The member 5 is used for a plasma processing device which generates a plasma 11 by applying microwave 9 to corrosive gas and is made of aluminum nitride ceramics. When tanδ in a frequency region of 2 to 3 GHz is 3×10<SP>-3</SP>or less, tanδ in the surface is A and tanδ in the surface in half the thickness of the entire thickness from the surface is B, the ratio (A/B) of the both is 0.85 to 1. <P>COPYRIGHT: (C)2004,JPO |
