| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus for improving the quality of a thin film such as a TiN film formed by plasma treatment, and to provide a plasma treatment method. <P>SOLUTION: The plasma treatment apparatus 10 comprises an electroconductive susceptor 56 for supporting a semiconductor wafer, which is arranged in a treatment chamber 12; an electroconductive gas-distribution plate 24 for distributing and supplying a clean gas for generating plasma, which is arranged so as to face the top face of the susceptor 56; an observation hole 66 made in a chamber wall 16 of the treatment chamber, so as to observe the plasma generated between the susceptor and the gas distribution plate from the outside; and a circular shield 68 made from quartz, which is arranged on the internal surface of the chamber wall so as to cover the observation hole. Because the shield has no unevenness, it makes a treatment gas smoothly flow, prevents plasma convergence due to the turbulent flow of the treatment gas, and makes the plasma treatment uniformly performed on the whole of the film. <P>COPYRIGHT: (C)2004,JPO |
