| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing nano-sized metal oxide quantum dots with uniform size distribution, and quantum dots produced by the method; to control the size of nanoparticles by adjusting the heat treatment conditions, the percentage of the solvent, and the thickness of the insulating layer; and to control the density of the produced quantum dots by adjusting the thickness of a thin metal film, by using a multilayer thin film, by selecting the type of the solvent and adjusting the quantity of the solvent, or by making metal and precursor materials react with each other, in advance. <P>SOLUTION: This quantum dot formation method, utilizing a thin metal film, comprises a step (a) of depositing a thin-metal film layer on a substrate; a step (b) of coating the thin-metal film layer deposited on the substrate with an insulator precursor; and a step (c) of subjecting the substrate, on which the thin-metal film layer and the insulator precursor are formed, to heat treatment in a tubular furnace so that the substrate gradually reaches a maximum temperature in the range of 200°C to 500°C. <P>COPYRIGHT: (C)2004,JPO</p> |
