SEMICONDUCTOR LASER AND LASER LIGHT EMITTING DEVICE USING THE SEMICONDUCTOR LASER

摘要

PROBLEM TO BE SOLVED: To obtain a stable light output of low noise in a semiconductor laser which carries out transverse multimode oscillation. SOLUTION: An n-AlGaAs grated buffer layer 12, an n-AlGaAs clad layer 13, an InGaP optical guide layer 14, an InGaAsP quantum well active layer 15, an InGaP optical guide layer 16, a p-AlGaAs clad layer 17 which is partially mesa-shaped, a p-GaAs cap layer 18, an insulating film 19 formed of polyimide arranged in both sides of a mesa part and a p-side electrode 20 formed of Ti/Pt/Au arranged on the cap layer are laminated on an n-GaAs substrate 11. An n-side electrode 21 formed of AuGe/Ni/Au is formed on the rear of the n-GaAs substrate 11. As for the insulating film 19, polyimide whose Young's modulus is about 0.5×1010(N/m2) or less is used. COPYRIGHT: (C)2004,JPO