| 摘要 |
PROBLEM TO BE SOLVED: To stabilize the storage status of a memory cell by making mis-writing preventable at writing. SOLUTION: A magnetic memory is provided with a memory cell provided with: a magnetoresistance effect element 3; a cell bit line 6 which is branched from a bit line BL and makes a writing current flow to the magnetoresistance effect element; a yoke 8, having an easily-magnetized axis direction same as the magnetoresistance effect element, which is provided to the cell bit line; and a writing-selective transistor 19 in which one of source/drain is connected to the cell bit line. Consequently, mis-writing can be prevented at writing, and the storage status of the memory cell is stabilized. COPYRIGHT: (C)2004,JPO
|
