| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implanting device and an ion implanting method as well as a manufacturing method of an SOI wafer, which achieve a high-level throughput by heightening ionic beam current, in implanting ion into a semiconductor board. SOLUTION: Magnets 7a, 7b are arranged at a side of side walls outside a plasma-generating room 6 of the ion implanting device with a certain interval, and the side walls and magnetic body members 8a, 8b are arranged between the side walls of the plasma-generating room 6 and the magnets 7a, 7b. With this, convergence of magnetic field lines to the plasma-generating room 6 is promoted to increase magnetic flux density in the plasma-generating room 6 when magnetic fields are formed with the magnets 7a, 7b, so that, an ionization efficiency is improved without augmenting magnetic force of the magnets 7a, 7b. COPYRIGHT: (C)2004,JPO
|
