| 发明名称 |
Two transistor nor device |
| 摘要 |
A NOR gate includes is constructed with two asymmetric FinFET type transistors instead of the conventional four-transistor NOR gate. The reduction in the number of transistors from four down to two allows for significant improvements in integrated semiconductor circuits.
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| 申请公布号 |
US2004100306(A1) |
申请公布日期 |
2004.05.27 |
| 申请号 |
US20020301617 |
申请日期 |
2002.11.22 |
| 申请人 |
KRIVOKAPIC ZORAN;AN JUDY XILIN;LIN MING-REN;WANG HAIHONG |
发明人 |
KRIVOKAPIC ZORAN;AN JUDY XILIN;LIN MING-REN;WANG HAIHONG |
| 分类号 |
H01L27/088;H01L27/092;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H03K19/20 |
主分类号 |
H01L27/088 |
| 代理机构 |
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