发明名称 |
COMPOSITE DIELECTRIC WITH IMPROVED ETCH SELECTIVITY FOR HIGH VOLTAGE MEMS STRUCTURES |
摘要 |
A method of manufacturing MEMS structures and devices that allows the fabrication of dielectric structures with improved etch selectivity and good electrical leakage characteristics. The dielectric structure includes a composite stack of silicon nitride sub-layers with a silicon-rich nitride sub-layer and a stoichiometric silicon nitride sub-layer at opposite ends of the stack. Alternatively, the dielectric structure includes a single silicon nitride layer providing a graded change in silicon content through the dielectric layer, from silicon-rich nitride to stoichiometric silicon nitride.
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申请公布号 |
US2004099928(A1) |
申请公布日期 |
2004.05.27 |
申请号 |
US20020306639 |
申请日期 |
2002.11.27 |
申请人 |
NUNAN THOMAS K.;GROSJEAN DAVID E.;O'KANE DENIS M.;SELLARS JAMES S. |
发明人 |
NUNAN THOMAS K.;GROSJEAN DAVID E.;O'KANE DENIS M.;SELLARS JAMES S. |
分类号 |
B81B3/00;(IPC1-7):H01L21/76 |
主分类号 |
B81B3/00 |
代理机构 |
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