COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE

摘要

A composition for film formation from which a porous film excelling in dielectric characteristics, adherence, coating film uniformity and mechanical strength and realizing reduced moisture absorption can be prepared; a porous film and a process for producing the same; and a highly reliable semiconductor device of high performance wherein the porous film is incorporated. In particular, a composition for film formation, obtained by performing hydrolytic condensation under acid or alkali conditions of a mixture of 100 parts by weight of at least one compound selected from the group consisting of hydrolyzable silicon compounds of the following general formulae R<1>aSiZ<1>4-a (1) and R<2>b(Z<2>)3-bSi-Y-Si(R<3>)cZ<3>3-c (2) and products of hydrolytic condensation of portion thereof and 0.1 to 20 parts by weight of at least one crosslinking agent selected from the group consisting of cyclic or multi-branched oligomers of limited structures represented by the following general formulae (3) to (8): [R<4>(H)SiO]e[R<5>(Z<4>)SiO]f (3); (R<6>SiO3/2)g[R<7>(H)SiO]h[R<8>(Z<5>)SiO]i (4); (HSiO3/2)j(Z<6>SiO3/2)k (5); [H(Me)2SiO1/2]L[Z<7>(Me)2SiO1/2]m(R<9>SiO3/2)n[R<10>(Z<8>)SiO]o (6); [H(Me)2SiO1/2]p[Z<9>(Me)2SiO1/2]q(SiO2)r(Z<10>SiO3/2)s (7); (Z<11>3SiO1/2)t(R<11>2SiO)u(R<12>SiO3/2)v[R<13>(Z<12>)SiO]w(SiO2)x(Z<13>SiO3/2)y (8).