TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A TFT(Thin Film Transistor) array substrate and manufacturing method thereof are provided to have a wide channel width by driving the respective unit pixels through two TFTs and minimize a stitch phenomenon. CONSTITUTION: A gate wiring including a conductive film made of aluminum, a gate line(121), a gate pad(125), and a gate electrode(123) is formed on the insulation substrate as a taper structure. A sustain electrode line(131) is formed on an upper portion of the substrate. The sustain electrode line(131) is superposed with a drain electrode(175) connected to a pixel electrode(190), thereby forming a sustain capacitor for increasing the charge preservation performance of a pixel. A gate electrode(123) is arranged with a horizontal direction and has the first and second gate electrodes(1231,1232) of the first and second TFTs(TFT1,TFT2).