CLEANING SOLUTION FOR SEMICONDUCTOR DEVICE AND METHOD FOR CLEANING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A cleaning solution for a semiconductor device and a method for cleaning a semiconductor device are provided to clean a semiconductor substrate having an exposed aluminum pattern by using megasonic energy and the cleaning solution of ammonia water, acetic acid, and deionized water. CONSTITUTION: A cleaning solution for a semiconductor device is formed with ammonia water, acetic acid, and deionized water. The weight percent of the acetic acid is higher than the weight percent of the ammonia water. The weight percent of the deionized water is higher than the weight percent of the acetic acid. A ratio of the ammonia water, the acetic acid, and the deionized water is 1: 1 to 100: 1000 to 100000. The cleaning solution of the ammonia water, the acetic acid, and the deionized water has acidity below 6.5. A cleaning solution layer is formed by providing the cleaning solution on a semiconductor substrate having an exposed metal pattern(S100). The megasonic energy is provided to the cleaning solution layer(S120). The semiconductor substrate having the exposed metal pattern is cleaned(S140).