| 摘要 |
PROBLEM TO BE SOLVED: To form an oxide film with film properties which stand comparison with that of a heat-oxide film through a low-temperature process. SOLUTION: After an insulating film on an active area of a substrate 2S constituting a semiconductor wafer 2W is removed, an insulating film 6a formed of, for example, a silicon oxide film is deposited by a reduced CVD method on a main surface of the semiconductor wafer 2W. This insulating film 6a forms a gate insulating film of a MIS FET later. Then a plasma process (oxygen plasma process) in an atmosphere containing oxygen as shown in a mimetic diagram with an arrow is carried out for the insulating film 6a. Consequently, the insulating film 6a formed by the CVD method can be improved to nearly the same film property with an insulating film formed of a heat oxide film. COPYRIGHT: (C)2004,JPO |
