| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for treatment by which a semiconductor wafer, LCD glass substrate, etc., can be treated in an atmosphere containing a prescribed process gas and which can be improved in throughput. SOLUTION: A resist removing device 1' is provided with a wafer guide 20 which holds a wafer W, a chamber 10' which houses the wafer W, and a gas supply nozzle 30 which supplies an ozone gas to the chamber 10'. The device 1' is also provided with an exhaust pipe 17b through which the gas in the chamber 10' can be discharged to the outside from the upper part of the chamber 10', and a pure water supply nozzle 40 which supplies a prescribed amount of pure water to the chamber 10'. In addition, a heater 72 is attached to the outside of the bottom of the chamber 10'. The wafer W is heated to a prescribed temperature with steam generated by heating the pure water stored in the bottom of the chamber 10' with the heater 72. COPYRIGHT: (C)2004,JPO |
