| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for planarizing a first material layer by performing chemical mechanical polishing "CMP" to a semiconductor die. SOLUTION: A wafer has a plurality of substantially same semiconductor dies separated by scribing lines; and a layer of silicon nitride 22 with a top face substantially in parallel with a wafer plane is formed on the wafer plane, and the layer of silicon dioxide 28 having different heights in the upper section of the top face is deposited on the top face. Masks having a plurality of places are formed extensively over the whole wafer comprising upper sections of the scribing lines, and each place has different gap-versus-pillar density ratios proportional to the height of a silicon dioxide 28 in the upper section of the top face. The silicon dioxide 28 is etched in an anisotropic manner through each gap of the masks extensively over the whole wafer, and each gap is etched by the same quantity in the height direction. Them silicon dioxide 28 is planarized with respect to the top face of silicon nitride 22 by using the "CMP". COPYRIGHT: (C)2004,JPO
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