发明名称 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE
摘要 <p>A composition for film formation from which a porous film of practical mechanical strength can be prepared through simple processing at low cost; a porous film and a process for producing the same; and a highly reliable semiconductor device of low cost and high performance wherein the porous film is incorporated. In particular, a composition for porous film formation, comprising a polymer obtained by hydrolytic condensation of at least one silane compound of the general formula: (R&lt;1&gt;)a Si (R&lt;2&gt;)4-a (1), preferably a polymer obtained by co-hydrolytic condensation of at least one silane compound of the general formula (1) and at least one silane compound of the general formula: (R&lt;3&gt;)b Si (R&lt;4&gt;)4-b (2). Further, there is provided a process for producing the porous film, comprising the steps of coating with the above film formation composition and forming pores.</p>
申请公布号 WO2004044073(A1) 申请公布日期 2004.05.27
申请号 WO2003JP14438 申请日期 2003.11.13
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;IWABUCHI, MOTOAKI;YAGIHASHI, FUJIO;HAMADA, YOSHITAKA;NAKAGAWA, HIDEO;SASAGO, MASARU 发明人 IWABUCHI, MOTOAKI;YAGIHASHI, FUJIO;HAMADA, YOSHITAKA;NAKAGAWA, HIDEO;SASAGO, MASARU
分类号 C08L83/04;C08G77/04;C08G77/38;C08K5/23;C09D183/04;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):C09D183/04;H01L21/312 主分类号 C08L83/04
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