发明名称 PHOTOSENSITIVE DRY FILM RESIST HAVING ION SCAVENGER LAYER, AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a photosensitive dry film resist having an ion scavenger layer capable of exhibiting not only excellent photosensitivity and heat resistance but also excellent electric reliability, and to provide a method for manufacturing the same. <P>SOLUTION: The photosensitive dry film resist has the ion scavenger layer in addition to at least a photosensitive film layer, in which the ion scavenger included in the ion scavenger layer preferably has capability to make coordinate bonding with metal ions. As a result, the ion migration resistance of the photosensitive dry film resist can be improved and the degradation in the electric reliability is efficiently averted while the properties, such as photosensitivity and heat resistance, of the resist are maintained. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004151394(A) 申请公布日期 2004.05.27
申请号 JP20020316800 申请日期 2002.10.30
申请人 KANEGAFUCHI CHEM IND CO LTD 发明人 OKADA YOSHIFUMI;KOKAWARA KAORU;YAMANAKA TOSHIO;TAKIGUCHI TOMOTERU
分类号 G03F7/004;G03F7/11;H05K3/00 主分类号 G03F7/004
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