发明名称 PATTERN DEFECT INSPECTION METHOD AND INSPECTION DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To speed up inspection in a device inspecting a defect, foreign matter, residue, and the like of the same design pattern on a wafer in a manufacturing process of a semiconductor device by means of an electron beam. <P>SOLUTION: The surface of a semiconductor specimen 7 is irradiated with an electron beam (area beam) having a fixed area, a reflected electron from the specimen surface is focused by an image focusing lens 11, and images of a plurality regions on the semiconductor specimen 7 surface are obtained to be stored in image storage parts 18 and 19. When a plurality of the stored area images are compared mutually, presence/absence and the position of a defect in the areas can be determined. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004151119(A) 申请公布日期 2004.05.27
申请号 JP20030432567 申请日期 2003.12.26
申请人 HITACHI LTD 发明人 SHINADA HIROYUKI;YAJIMA YUSUKE;MURAKOSHI HISAYA;HASEGAWA MASAKI;NOZOE MARI;TAKATO ATSUKO;SUGIYAMA KATSUYA;KURODA KATSUHIRO;UMEMURA KAORU;USAMI YASUTSUGU
分类号 G01N23/225;H01L21/66;(IPC1-7):G01N23/225 主分类号 G01N23/225
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