| 摘要 |
PROBLEM TO BE SOLVED: To provide a plating device with which copper plating can satisfactorily be applied to a substrate such as a semiconductor wafer. SOLUTION: A wafer treatment part 1 in a substrate treatment device is provided with plating treatment units 20a to 20d, bevel etching units 21a and 21b, a cassette stage 16 having a cassette Cw for housing a wafer W and a cassette Cd for housing a dummy wafer D, placed thereon and a transport robot TR for transporting the wafer W or the dummy wafer D among the cassettes Cw and Cd, the plating treatment units 20a to 20d, and the bevel etching units 21a and 21b. In the plating treatment units 20a to 20d, copper plating can be applied to the wafer W and the dummy wafer D. In the bevel etching units 21a and 21b, the etching of the peripheral part of the wafer W, and the removal of a copper film formed on the dummy wafer D by etching can be performed. COPYRIGHT: (C)2004,JPO
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