| 摘要 |
PROBLEM TO BE SOLVED: To provide high-density plasma oxide-film evaporation equipment which prevents attacks applied to the beveling site of a semiconductor substrate, through the deformation of a guide ring. SOLUTION: The high-density plasma oxide-film evaporation equipment, for embedding a high-density plasma oxide film in the trench of the semiconductor substrate 124, is provided. A guide ring 100 for protecting the semiconductor substrate 124 is deformed in a chamber 126, separation between the semiconductor substrate 124 and the guide ring 100 is diversified, and the attack of plasma ions generated in an HDP evaporation process is minimized, by forming a nitride film for a liner evaporated in the trench, before HDP oxide-film evaporation, into a specified thickness. Accordingly, the peeling phenomenon to the nitride film for the liner at the beveling site of the semiconductor substrate 124 is prevented. COPYRIGHT: (C)2004,JPO
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