| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a fine pattern can be appropriately formed in an interlayer dielectric by a dual damascene method. SOLUTION: After forming an Si<SB>3</SB>N<SB>4</SB>film 6 as a hard mask for an interconnection, an underlayer resin film 9 is so formed as to fill in a level difference of the film 6 and planarize it. On top of the underlayer resin film 9, an SOG film 10 and then a resist mask 11 formed with via hole patterns are formed. With the resist mask 11 as a mask, the SOG film 10 is etched. Then, with the SOG film 10 as a mask, the underlayer resin film 9 is etched, and at the same time, the resist mask 11 is removed. Thereafter, a three-layer hard mask is etched using the underlayer resin film 9 as a mask to form via hole patterns in these films and, at the same time, to remove the SOG film 10. By this method, the resist mask 11 can be obtained which has patterns as designed, resulting in obtaining very accurate fine patterns. COPYRIGHT: (C)2004,JPO
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